PART |
Description |
Maker |
AS7C33512NTF32A |
(AS7C33512NTF32A / AS7C33512NTF36A) 3.3V 512K x 32/36 Flowthrough Synchronous SRAM
|
Alliance Semiconductor Corporation
|
IDT71V65702 IDT71V65702S75BG8 IDT71V65702S80BG8 ID |
3.3V 256K x 36 ZBT Synchronous 2.5V I/O Flowthrough SRAM 3.3V 512K x 18 ZBT Synchronous 2.5V I/O Flowthrough SRAM
|
IDT
|
IDT71V67903S80BGI IDT71V67903S75BG IDT71V67903S75B |
3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PBGA165 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PBGA119 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA119
|
IDT Integrated Device Technology, Inc.
|
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储 RESISTOR 62 OHM .5W CARB COMP 4 Mbit (512K x8) SuperFlash EEPROM 4兆位(为512k × 8)超快闪EEPROM 4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32 4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32 (SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
AS7C251MNTF32A |
(AS7C251MNTF32A / AS7C251MNTF36A) 2.5V 1M x 32/36 Flowthrough SRAM
|
Alliance Semiconductor Corporation
|
AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 512K X 16 FLASH 3V PROM, 120 ns, PDSO48 512K X 16 FLASH 3V PROM, 120 ns, PDSO44 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc. SPANSION LLC
|
AS7C3364NTF32-36B.V1.0 AS7C3364NTF36B-80TQIN AS7C3 |
3.3V 64K x 32/36 Flowthrough Synchronous SRAM with NTD 64K X 36 ZBT SRAM, 8 ns, PQFP100 3.3V 64K x 32/36 Flowthrough Synchronous SRAM with NTD 64K X 32 ZBT SRAM, 8 ns, PQFP100 From old datasheet system
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
79LV0408XPFK-20 79LV0408XPFI-20 79LV0408XPFH-20 79 |
Low Voltage 4 Megabit (512k x 8-bit) EEPROM 512K X 8 EEPROM 3V, 250 ns, PDFP40 Low Voltage 4 Megabit (512k x 8-bit) EEPROM 512K X 8 EEPROM 3V, 200 ns, PDFP40 IC LOGIC 3245 OCTAL FET BUS SWITCH -40 85C QSOP-20 55/TUBE 512K X 8 EEPROM 3V, 250 ns, PDFP40
|
Maxwell Technologies, Inc
|
GS816136CD-300IT |
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5 ns, PBGA165
|
GSI Technology, Inc.
|
HY29LV800 HY29LV800T-55 HY29LV800T-55I HY29LV800T- |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory 8兆位00万x 8/512K × 16)低压快闪记忆体
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
CY14B104L-BA15XCT CY14B104L-BA15XI |
4 Mbit (512K x 8/256K x 16) nvSRAM 512K X 8 NON-VOLATILE SRAM, 15 ns, PBGA48
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|